1. A method comprising:partially activating a p-type region in a group III-nitride structure comprising a light emitting layer disposed between an n-type region and the p-type region;
after partially activating the p-type region, forming a metal p-contact on the p-type region, the metal p-contact comprising:
a reflective first metal;
a second metal; and
a blocking material disposed over a first portion of the p-type region and no blocking material is disposed over a second portion of the p-type region; and
after forming the metal p-contact, further activating the p-type region such that the first portion is less conductive than the second portion.