US Patent No. 9,991,414


Patent No. 9,991,414
Issue Date June 05, 2018
Title Method Of Forming A Composite Substrate
Inventorship Nathan Frederick Gardner, Sunnyvale, CA (US)
Melvin Barker McLaurin, San Jose, CA (US)
Michael Jason Grundmann, Sunnyvale, CA (US)
Werner Goetz, Palo Alto, CA (US)
John Edward Epler, San Jose, CA (US)
Qi Ye, Palo Alto, CA (US)
Assignee Lumileds LLC, San Jose, CA (US)

Claim of US Patent No. 9,991,414

1. A method comprising:growing a III-nitride layer with a bulk lattice constant alayer on a non-III-nitride growth substrate with an in-plane lattice constant asubstrate such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%;
providing a composite substrate comprising the III-nitride layer bonded to a host substrate; and
growing a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region on the III-nitride layer of the composite substrate.