US Patent No. 9,935,265

RESISTIVE RANDOM ACCESS MEMORY


Patent No. 9,935,265
Issue Date April 03, 2018
Title Resistive Random Access Memory
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Kuan-Chang Chang, Kaohsiung (TW)
Tsung-Ming Tsai, Kaohsiung (TW)
Chih-Hung Pan, Kaohsiung (TW)
Po-Hsun Chen, Kaohsiung (TW)
Assignee National Sun Yat-Sen University, Kaohsiung (TW)

Claim of US Patent No. 9,935,265

1. A resistive random access memory comprising:a resistance changing layer having a first face and a second face opposite to the first face, wherein the resistance changing layer is switchable between a high resistance state and a low resistance state; and
a first electrode layer and a second electrode layer respectively coupled with the first face and the second face of the resistance changing layer, wherein the first electrode layer directly abuts the first face of the resistance changing layer, wherein the second electrode layer directly abuts the second face of the resistance changing layer, wherein each of the first electrode layer and the second electrode layer comprises a doping area containing a heavy element and a non-doping area, wherein the doping area of the first electrode layer is located between the non-doping area of the first electrode layer and the resistance changing layer, wherein the doping area of the second electrode layer is located between the non-doping area of the second electrode layer and the resistance changing layer, wherein the doping area of the first electrode layer directly abuts the first face of the resistance changing layer, wherein the doping area of the second electrode layer directly abuts the second face of the resistance changing layer, and wherein the resistance changing layer is sandwiched between the doping areas of the first electrode layer and the second electrode layer.