US Patent No. 9,911,896

SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURED SURFACE


Patent No. 9,911,896
Issue Date March 06, 2018
Title Semiconductor Light Emitting Device Growing Active Layer On Textured Surface
Inventorship Sungsoo Yi, Sunnyvale, CA (US)
Nathan F. Gardner, Sunnyvale, CA (US)
Michael R. Krames, Los altos, CA (US)
Linda T. Romano, Sunnyvale, CA (US)
Assignee Koninklijke Phillips N.V., Eindhoven (NL) Lumileds LLC, San Jose, CA (US)...

Claim of US Patent No. 9,911,896

1. A device comprising:
a III-nitride semiconductor structure comprising:
a first n-type layer including a textured surface, the textured surface having a cross sectional profile of peaks alternating
with valleys; and

a second n-type layer with at least partial strain relief grown over the textured surface, the layer with at least partial
strain relief comprising islands formed on the peaks, the islands expanding laterally to provide the at least partial strain
relief;

a light emitting layer with at least partial strain relief, the light emitting layer having a top surface that is planar and
not textured, the light emitting layer being disposed on the second n-type layer within 1000 angstroms of the textured surface;
and

a p-type region disposed over the light emitting layer.