1. A device comprising:
a semiconductor structure comprising:
a light emitting layer disposed between an n-type region and a p-type region;
a plurality of voids extending into the n-type region, the light emitting layer, and the p-type region of the semiconductor
structure;

an n-electrode metal disposed in the plurality of voids, wherein the n-electrode metals extends to an edge of the device;
a reflective metal disposed on the p-type region;
a p-electrode metal disposed on the reflective metal; and
a support material disposed in the plurality of voids, wherein a surface of the device is planar, wherein the planar surface
of the device includes a surface of the support material, a surface of the n-electrode metal, and a surface of the p-electrode
metal.