US Patent No. 9,711,720

RESISTIVE RANDOM ACCESS MEMORY HAVING STABLE FORMING VOLTAGE


Patent No. 9,711,720
Issue Date July 18, 2017
Title Resistive Random Access Memory Having Stable Forming Voltage
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Kuan-Chang Chang, Kaohsiung (TW)
Tsung-Ming Tsai, Kaohsiung (TW)
Tian-Jian Chu, Kaohsiung (TW)
Chih-Hung Pan, Kaohsiung (TW)
Assignee National Sun Yat-Sen University, Kaohsiung (TW)

Claim of US Patent No. 9,711,720

1. A resistive random access memory, comprising:
a first electrode having a mounting face;
a separating medium having a first face in contact with the mounting face of the first electrode, a second face opposite to
the first face, and an inner face extending between the first and second faces, wherein the separating medium forms a through
hole extending from the first face to the second face, wherein a part of the mounting face of the first electrode is not covered
by the separating medium, and wherein the separating medium has a first dielectric;

a resistance changing layer extending along the part of the mounting face of the first electrode as well as the inner face
and the second face of the separating medium, wherein the resistance changing layer has a second dielectric having a dielectric
constant smaller than a dielectric constant of the first dielectric; and

a second electrode arranged on the resistance changing layer,
wherein the separating medium further comprises a third dielectric having a dielectric constant different from the dielectric
constant of the first dielectric, wherein the first and third dielectrics have different distribution regions, and wherein
both the first and third dielectrics adjoin the resistance changing layer.