US Patent No. 9,685,610

METHOD FOR PRODUCING A RESISTIVE RANDOM ACCESS MEMORY


Patent No. 9,685,610
Issue Date June 20, 2017
Title Method For Producing A Resistive Random Access Memory
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Kuan-Chang Chang, Kaohsiung (TW)
Tsung-Ming Tsai, Kaohsiung (TW)
Tian-Jian Chu, Kaohsiung (TW)
Chih-Hung Pan, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,685,610

1. A method for producing a resistive random access memory, comprising:
preparing a first metal layer;
sputtering a resistive switching layer on the first metal layer;
conducting surface treatment on the resistive switching layer by using a plasma containing mobile ions to dope the mobile
ions into the resistive switching layer, with a polarity of the mobile ions being opposite to a polarity of oxygen ions; and

sputtering a second metal layer on the resistive switching layer.