US Patent No. 9,640,724


Patent No. 9,640,724
Issue Date May 02,2017
Title Iii-nitride Light Emitting Device With Double Heterostructure Light Emitting Region
Inventorship Yu-Chen Shen, Sunnyvale, CA (US)
Nathan F. Gardner, Sunnyvale, CA (US)
Satoshi Watanabe, Cupertino, CA (US)
Michael R. Krames, Mountain View, CA (US)
Gerd O. Mueller, San Jose, CA (US)
Assignee Lumileds LLC, San Jose, CA (US)

Claim of US Patent No. 9,640,724

1. A semiconductor light emitting device comprising:
an n-type region;
a p-type region; and
a light emitting region disposed between the n-type region and the p-type region in a double-heterostructure that includes
only a single III-nitride light emitting layer, this light emitting layer being the only layer in the device from which light
is produced when current flows between the n-type and p-type region, wherein:

the light emitting layer has a thickness between 100 Å and 600 Å;
the light emitting layer is devoid of any barrier layer;
at least a portion of the light emitting layer has a graded InN composition; and
a plot of InN composition as a function of distance from the n-type region for the light emitting layer comprises a plurality
of local minima in InN composition.