US Patent No. 9,640,724
III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMITTING REGION
| Patent No. | 9,640,724 |
|---|---|
| Issue Date | May 02, 2017 |
| Title | Iii-nitride Light Emitting Device With Double Heterostructure Light Emitting Region |
| Inventorship | Yu-Chen Shen, Sunnyvale, CA (US) Nathan F. Gardner, Sunnyvale, CA (US) Satoshi Watanabe, Cupertino, CA (US) Michael R. Krames, Mountain View, CA (US) Gerd O. Mueller, San Jose, CA (US) |
| Assignee | Lumileds LLC, San Jose, CA (US) |
Claim of US Patent No. 9,640,724
1. A semiconductor light emitting device comprising:
an n-type region;
a p-type region; and
a light emitting region disposed between the n-type region and the p-type region in a double-heterostructure that includes
only a single III-nitride light emitting layer, this light emitting layer being the only layer in the device from which light
is produced when current flows between the n-type and p-type region, wherein:
the light emitting layer has a thickness between 100 Ã… and 600 Ã…;
the light emitting layer is devoid of any barrier layer;
at least a portion of the light emitting layer has a graded InN composition; and
a plot of InN composition as a function of distance from the n-type region for the light emitting layer comprises a plurality
of local minima in InN composition.
an n-type region;
a p-type region; and
a light emitting region disposed between the n-type region and the p-type region in a double-heterostructure that includes
only a single III-nitride light emitting layer, this light emitting layer being the only layer in the device from which light
is produced when current flows between the n-type and p-type region, wherein:
the light emitting layer has a thickness between 100 Ã… and 600 Ã…;
the light emitting layer is devoid of any barrier layer;
at least a portion of the light emitting layer has a graded InN composition; and
a plot of InN composition as a function of distance from the n-type region for the light emitting layer comprises a plurality
of local minima in InN composition.