US Patent No. 9,553,426

OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS


Patent No. 9,553,426
Issue Date January 24, 2017
Title Optical Device Structure Using Gan Substrates And Growth Structures For Laser Applications
Inventorship James W. Raring, Santa Barbara, CA (US)
Assignee SORAA LASER DIODE, INC., Goleta, CA (US)

Claim of US Patent No. 9,553,426

1. A device comprising:
a {30-31} crystalline surface region comprising gallium and nitrogen;
a laser stripe region formed overlying a portion of the {30-31} crystalline surface region, the laser stripe region being
characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first
end and a second end;

a first cleaved facet provided on the first end of the laser stripe region, the first cleaved facet comprising a first semipolar
surface; and

a second cleaved facet provided on the second end of the laser stripe region, the second cleaved facet comprising a second
semipolar surface,

wherein the first cleaved facet is substantially parallel with the second cleaved facet; the {30-31} crystalline surface region
is selected from either (30-31) or (30-3-1); and the {30-31} crystalline surface region is off-cut less than +/?8 degrees
toward or away from an a-plane.