US Patent No. 9,530,664

METHOD FOR MANUFACTURING ELECTRONIC DEVICE BY FORMING A HOLE IN A MULTILAYER INSULATOR FILM BY PLASMA ETCHING


Patent No. 9,530,664
Issue Date December 27, 2016
Title Method For Manufacturing Electronic Device By Forming A Hole In A Multilayer Insulator Film By Plasma Etching
Inventorship Shingo Kitamura, Fujisawa (JP)
Aiko Kato, Machida (JP)
Assignee Canon Kabushiki Kaisha, Tokyo (JP)

Claim of US Patent No. 9,530,664

1. A method for manufacturing an electronic device, comprising:
forming a hole in a multilayer insulator film including a first insulator layer overlying a substrate, a second insulator
layer disposed between the substrate and the first insulator layer and made of a different material from the first insulator
layer, the first insulator layer having a larger thickness than the second insulator layer, and a third insulator layer disposed
between the second insulator layer and the substrate and made of a different material from the second insulator layer, the
hole being in a tapered shape of which diameter decreases in a direction toward the substrate; and

filling the hole,
wherein the forming of the hole includes:
partially removing the first insulator layer to form an opening passing through the first insulator layer by plasma etching
using a gas of a first type containing a first component capable of etching the first insulator layer;

partially removing the second insulator layer to form an opening passing through the second insulator layer by plasma etching
using a gas of a second type containing a second component that is not contained in the gas of the first type and is capable
of etching the second insulator layer, and a third component having a higher deposition ability than the second component;
and

partially removing the third insulator layer to form an opening passing through the third insulator layer by plasma etching
using a gas of the first type.