US Patent No. 9,496,493

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PRODUCING SAME


Patent No. 9,496,493
Issue Date November 15, 2016
Title Resistive Random Access Memory And Method For Producing Same
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Kuan-Chang Chang, Kaohsiung (TW)
Tsung-Ming Tsai, Kaohsiung (TW)
Tian-Jian Chu, Kaohsiung (TW)
Chih-Hung Pan, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,496,493

1. A resistive random access memory comprising:
two electrode layers; and
a resistive switching layer mounted between the two electrode layers, with the resistive switching layer consisting essentially
of insulating material with oxygen, metal material, and mobile ions, and with a polarity of the mobile ions being opposite
to a polarity of oxygen ions.