US Patent No. 9,443,965

METHOD FOR PRODUCING A THIN FILM TRANSISTOR


Patent No. 9,443,965
Issue Date September 13, 2016
Title Method For Producing A Thin Film Transistor
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Hua-Mao Chen, Kaohsiung (TW)
Ming-Yen Tsai, Kaohsiung (TW)
Tian-Yu Hsieh, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,443,965

1. A method for producing a thin film transistor, comprising:
forming a transistor prototype on a substrate, with the transistor prototype including two transparent electrodes, with the
two transparent electrodes adapted to form a source and a drain of a thin film transistor; and metallizing the two transparent
electrodes for reducing contact resistance of the two transparent electrodes by

exposing the two transparent electrodes of the transistor prototype in an environment full of a hydrogen plasma with a biasing
power of 200-400 W for 20-100 seconds, with the hydrogen plasma conducting a surface treatment on the two transparent electrodes
of the transistor prototype to form the thin film transistor.