US Patent No. 9,431,258

METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE


Patent No. 9,431,258
Issue Date August 30, 2016
Title Method For Photodepositing A Particle On A Graphene-semiconductor Hybrid Panel And A Semiconductor Structure
Inventorship Chun-Hu Chen, Kaohsiung (TW)
Cheng-Chi Kuo, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,431,258

1. A method for photodepositing a particle on a graphene-semiconductor hybrid panel, comprising:
providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, wherein the graphene
sheet is adhered to a surface of the semiconductor substrate;

dipping the graphene-semiconductor hybrid panel in a fluid, wherein the fluid contains a precursor; and
forming photoinduced electrons and holes in the semiconductor substrate by irradiating the semiconductor substrate using a
light source, until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of the graphene
sheet by the photoinduced electrons or holes transferred to the graphene sheet, wherein the light source has an energy equal
to or higher than a band gap of the semiconductor substrate.