1. A device comprising:
a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;
a porous III-nitride region;
a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region;
a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and
a plurality of openings formed in the mask layer.