US Patent No. 9,385,265
III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR
| Patent No. | 9,385,265 |
|---|---|
| Issue Date | July 05, 2016 |
| Title | Iii-nitride Light Emitting Device Including Porous Semiconductor |
| Inventorship | Jonathan J. Wierer, Jr., Pleasanton, CA (US) John E. Epler, San Jose, CA (US) |
| Assignee | LUMILEDS LLC, San Jose, CA (US) |
Claim of US Patent No. 9,385,265
1. A device comprising:
a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;
a porous III-nitride region;
a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region;
a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and
a plurality of openings formed in the mask layer.
a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;
a porous III-nitride region;
a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region;
a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and
a plurality of openings formed in the mask layer.