US Patent No. 9,385,265

III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR


Patent No. 9,385,265
Issue Date July 05, 2016
Title Iii-nitride Light Emitting Device Including Porous Semiconductor
Inventorship Jonathan J. Wierer, Jr., Pleasanton, CA (US)
John E. Epler, San Jose, CA (US)
Assignee LUMILEDS LLC, San Jose, CA (US)

Claim of US Patent No. 9,385,265

1. A device comprising:
a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;
a porous III-nitride region;
a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region;
a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and
a plurality of openings formed in the mask layer.