US Patent No. 9,362,496

RESISTIVE MEMORY CELL WITH TRENCH-SHAPED BOTTOM ELECTRODE


Patent No. 9,362,496
Issue Date June 07, 2016
Title Resistive Memory Cell With Trench-shaped Bottom Electrode
Inventorship James Walls, Mesa, AZ (US)
Paul Fest, Chandler, AZ (US)
Assignee MICROCHIP TECHNOLOGY INCORPORATED, Chandler, AZ (US)

Claim of US Patent No. 9,362,496

1. A resistive memory cell, comprising:
a top electrode;
a bottom electrode structure having a trench shape and defining a bottom electrode connection and a bottom electrode sidewall
extending from the bottom electrode connection and defining an interior trench area;

wherein the bottom electrode sidewall extends from a top surface of the bottom electrode connection to a tip region defining
a tip surface facing generally away from the bottom electrode connection;

wherein the bottom electrode sidewall adjacent the bottom electrode connection has a first sidewall region thickness in a
first direction, and the tip surface facing away from the bottom electrode connection has a tip thickness in the first direction
that is less than the first sidewall region thickness; and

an electrolyte layer defining an electrolyte switching region arranged between the top electrode and the tip region of the
bottom electrode sidewall and at least a portion of the electrolyte layer extends into the interior trench area, wherein the
electrolyte layer provides a path for the formation of a conductive filament or vacancy chain from the tip surface of the
bottom electrode sidewall to the top electrode, via the electrolyte switching region, when a voltage bias is applied to the
resistive memory cell, wherein an insulating layer is arranged between the electrolyte layer and a surface of the bottom electrode
sidewall facing the interior trench area.