US Patent No. 9,312,440

EPITAXY STRUCTURE OF A LIGHT EMITTING ELEMENT HAVING III-NITRIDE QUANTUM WELLS


Patent No. 9,312,440
Issue Date April 12, 2016
Title Epitaxy Structure Of A Light Emitting Element Having Iii-nitride Quantum Wells
Inventorship I-Kai Lo, Kaohsiung (TW)
Yu-Chi Hsu, Kaohsiung (TW)
Cheng-Hung Shih, Kaohsiung (TW)
Wen-Yuan Pang, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,312,440

1. An epitaxy structure of a light emitting element comprising:
a gallium nitride substrate including a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride
hexagonal pyramid, with the gallium nitride hexagonal prism extending from the gallium nitride buffer layer along an axis,
with the gallium nitride hexagonal pyramid extending from the gallium nitride hexagonal prism along the axis and gradually
expanding to form a hexagonal frustum;

an N-type gallium nitride layer located on the gallium nitride hexagonal pyramid of the gallium nitride substrate;
a quantum well unit including an indium gallium nitride layer and a gallium nitride layer, with the indium gallium nitride
layer located on the N-type gallium nitride layer, and with the gallium nitride layer located on the indium gallium nitride
layer; and

a P-type gallium nitride layer located on the gallium nitride layer of the quantum well unit.