US Patent No. 9,299,560

METHODS FOR DEPOSITING GROUP III-V LAYERS ON SUBSTRATES


Patent No. 9,299,560
Issue Date March 29, 2016
Title Methods For Depositing Group Iii-v Layers On Substrates
Inventorship Errol Antonio C. Sanchez, Tracy, CA (US)
Yi-Chiau Huang, Fremont, CA (US)
Xinyu Bao, Mountain View, CA (US)
Assignee APPLIED MATERIALS, INC., Santa Clara, CA (US)

Claim of US Patent No. 9,299,560

1. A method of depositing a group III-V layer on a substrate, comprising:
etching a silicon-containing substrate, having a surface oriented in a direction other than a <111> direction, to etch out
a source/drain region in the silicon-containing substrate;

growing a silicon-containing surface oriented in the <111> direction in the etched out source/drain region atop a surface
oriented in a direction other than the <111> direction;

depositing a first layer comprising at least one of a first Group III element or a first Group V element on the silicon-containing
surface oriented in the <111> direction at a first temperature ranging from about 300 to about 400 degrees Celsius; and

depositing a second layer comprising a second Group III element and a second Group V element atop the first layer at a second
temperature ranging from about 300 to about 600 degrees Celsius.