US Patent No. 9,287,501

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PRODUCING SAME


Patent No. 9,287,501
Issue Date March 15, 2016
Title Resistive Random Access Memory And Method For Producing Same
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Kuan-Chang Chang, Kaohsiung (TW)
Tsung-Ming Tsai, Kaohsiung (TW)
Chih-Hung Pan, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,287,501

1. A resistive random access memory comprising:
a first electrode layer;
an oxygen-poor layer disposed on the first electrode layer, with the oxygen-poor layer formed by indium tin oxide, indium
oxide, tin dioxide, or zinc oxide;

an insulating layer disposed on the oxygen-poor layer, with the insulating layer formed by silicon dioxide or hafnium oxide;
and

a second electrode layer disposed on the insulating layer,
wherein the second electrode layer is formed by indium tin oxide.