US Patent No. 9,282,646

INTERPOSED SUBSTRATE AND MANUFACTURING METHOD THEREOF


Patent No. 9,282,646
Issue Date March 08, 2016
Title Interposed Substrate And Manufacturing Method Thereof
Inventorship Dyi-Chung Hu, Hsinchu County (TW)
Ming-Chih Chen, Hsinchu (TW)
Tzyy-Jang Tseng, Hsinchu (TW)
Assignee Unimicron Technology Corp., Taoyuan (TW)

Claim of US Patent No. 9,282,646

1. An interposed substrate comprising:
an insulating material layer having an upper surface and a lower surface opposite to each other, and a plurality of first
through holes and a plurality of second through holes, wherein the first through holes and the second through holes penetrate
through the insulating material layer, and a diameter of each of the first through holes is smaller than a diameter of each
of the second through holes;

a plurality of conductive pillars respectively disposed within the first through holes of the insulating material layer, wherein
each conductive pillar has a top surface and a bottom surface opposite to each other, and the top surface of each conductive
pillar and the upper surface of the insulating material layer are coplanar;

a patterned conductor layer disposed within the second through holes of the insulating material layer, wherein the conductive
pillars are separated from each other and stacked on the patterned conductor layer, and a bottom surface of the patterned
conductor layer and the lower surface of the insulating material layer are not aligned; and

a dielectric layer disposed on the upper surface of the insulating material layer, wherein the dielectric layer directly covers
the upper surface of the insulating material layer and the top surfaces of the conductive pillars.