US Patent No. 9,281,411

THIN FILM TRANSISTOR


Patent No. 9,281,411
Issue Date March 08, 2016
Title Thin Film Transistor
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Ming-Yen Tsai, Kaohsiung (TW)
Tian-Yu Hsieh, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,281,411

1. A thin film transistor, comprising:
a substrate;
a gate arranged on the substrate;
an insulating layer arranged on the gate;
a source arranged on the insulating layer;
a drain arranged on the insulating layer; and
an active layer arranged between the source and the drain, wherein the active layer comprises a bottom layer, an intermediate
layer and a top layer stacked together, wherein the bottom layer is arranged on the insulating layer, wherein the conductivity
of the intermediate layer is higher than the conductivity of the bottom layer, and wherein the conductivity of the bottom
layer is higher than the conductivity of the top layer.