US Patent No. 9,269,826

AMORPHOUS OXIDE AND THIN FILM TRANSISTOR


Patent No. 9,269,826
Issue Date February 23, 2016
Title Amorphous Oxide And Thin Film Transistor
Inventorship Hideo Hosono, Kanagawa (JP)
Masahiro Hirano, Tokyo (JP)
Hiromichi Ota, Aichi (JP)
Toshio Kamiya, Kanagawa (JP)
Kenji Nomura, Tokyo (JP)
Assignee JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-shi (JP) CANON KABUSHIKI KA...

Claim of US Patent No. 9,269,826

1. A thin film transistor device comprising:
a drain electrode;
a source electrode;
a channel layer contacting the drain electrode and the source electrode,
wherein the channel layer is formed of an amorphous InxSn1?xOxide (0.8?x ?0.9) consisting of SnO2 in the presence of In2O3 as a host oxide, further the channel layer is prepared by a sputtering method or a pulsed laser deposition method using a
In2O3—SnO2 polycrystalline sinter as a target in an atmosphere containing oxygen gas, and

the channel layer having a transparent, semi-insulating property represented by the electron mobility is more than 1 cm2/(V·sec) and the electron carrier concentration is 1018/cm3 or less as measured by Hall-effect measurement at room temperature;

a gate electrode; and
a gate insulating film positioned between the gate electrode and the channel.