1. A baffle for use in a semiconductor process chamber, comprising:
a body comprising aluminum nitride and a metal oxide binding agent, a center stem and an outer annulus coupled to and extending
radially outwards from a lower portion of the center stem, wherein a ratio of aluminum nitride to the metal oxide binding
agent on a surface of the body is greater than or equal to the ratio within the body;
a gas inlet disposed in an upper portion of the center stem; and
a plurality of gas outlets disposed in a lower portion of the center stem and fluidly coupled to the gas inlet.