US Patent No. 9,171,621

NON-VOLATILE MEMORY (NVM) AND METHOD FOR MANUFACTURING THEREOF


Patent No. 9,171,621
Issue Date October 27, 2015
Title Non-volatile Memory (nvm) And Method For Manufacturing Thereof
Inventorship Kun Sik Park, Daejeon (KR)
Kyu Ha Baek, Daejeon (KR)
Assignee Electronics and Telecommunications Research Institute, Daejeon (KR)

Claim of US Patent No. 9,171,621

1. A nonvolatile memory comprising:
a plurality of memory cells, wherein each of the memory cells comprises:
a deep well formed on a substrate;
a first well formed within the deep well;
a second well formed within the deep well, separately from the first well within the deep well;
a first metal-oxide-semiconductor field-effect transistor (MOSFET) formed on the first well; and
a second MOSFET formed on the second well,
wherein at least one of the first and second wells is shared between adjacent memory cells in the nonvolatile memory; and
wherein the nonvolatile memory applies a first voltage for recording data to at least one of a source region, a drain region
and a well region of the first MOSFET so as to record data in the memory, applies a preset voltage to the second well shared
between a memory cell included in the nonvolatile memory and a memory cell adjacent to the memory cell, applies a preset voltage
to at least one of a source region and a drain region of the second MOSFET, and controls to 0 V or float a source region and
a drain region of a second MOSFET included in a memory cell not selected for recording the data, so that electrons are injected
into a floating gate of the second MOSFET by tunneling.