US Patent No. 9,147,808

III-NITRIDE QUANTUM WELL STRUCTURE AND A LIGHT-EMITTING UNIT USING THE SAME


Patent No. 9,147,808
Issue Date September 29, 2015
Title Iii-nitride Quantum Well Structure And A Light-emitting Unit Using The Same
Inventorship I-Kai Lo, Kaohsiung (TW)
Yu-Chi Hsu, Kaohsiung (TW)
Cheng-Hung Shih, Kaohsiung (TW)
Wen-Yuan Pang, Kaohsiung (TW)
Ming-Chi Chou, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 9,147,808

1. An III-nitride quantum well structure comprising:
a gallium nitride base having a gallium nitride buffering layer, a gallium nitride post extending from the gallium nitride
buffering layer along an axis, and a gallium nitride pyramid gradually expanding from the gallium nitride post along the axis
to form a mounting surface, wherein the mounting surface is distant to the gallium nitride post;

an indium gallium nitride layer having a first coupling face and a second coupling face opposite to the first coupling face,
wherein the first coupling face is coupled with the mounting surface of the gallium nitride base; and

a gallium nitride covering layer having a first coupling face and a second coupling face opposite to the first coupling face
of the gallium nitride covering layer, wherein the first coupling face of the gallium nitride covering layer is coupled with
the second coupling face of the indium gallium nitride layer,

wherein the gallium nitride pyramid gradually expands from the gallium nitride post to the indium gallium nitride layer.