US Patent No. 9,081,284

METHOD OF MANUFACTURING FORMING CONDUCTIVE LINE PATTERN IN BOUNDARY REGION


Patent No. 9,081,284
Issue Date July 14, 2015
Title Method Of Manufacturing Forming Conductive Line Pattern In Boundary Region
Inventorship Taikan Kanou, Kawasaki (JP)
Masaru Fujimura, Yokohama (JP)
Assignee CANON KABUSHIKI KAISHA, Tokyo (JP)

Claim of US Patent No. 9,081,284

1. A method of manufacturing a semiconductor device including a layer having a first region and a second region contacting
the first region at a boundary line between the first region and the second region, the layer within the first region including
a plurality of first patterns and the layer within the second region including a plurality of second patterns, the method
comprising:
forming a pattern including an on-boundary-line line portion with a width defined by a first line which is arranged in the
first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel
to the boundary line, wherein the first region includes a first area that is an entire area within an outer boundary of a
region in which the plurality of first patterns and the first line are to be arranged, and the second region includes a second
area that is an entire area within an outer boundary of a region in which the plurality of second patterns and the second
line are to be arranged, and wherein the first area and the second area have no area shared by the first area and the second
area,

the forming the pattern including
individually performing, for a photoresist applied on a substrate, first exposure for defining the first line using a first
photomask that includes first portions for forming the plurality of first patterns and a first light-shielding portion having
a first edge defining the first line and light-shielding the second area, and second exposure for defining the second line
using a second photomask that includes second portions for forming the plurality of second patterns and a second light-shielding
portion having a second edge defining the second line and light-shielding the first area, and

developing the photoresist that has undergone the individually-performed first exposure and second exposure.