US Patent No. 11,116,084

METHOD, DEVICE AND SYSTEM FOR PROVIDING ETCHED METALLIZATION STRUCTURES


Patent No. 11,116,084
Issue Date September 07, 2021
Title Method, Device And System For Providing Etched Metallization Structures
Inventorship Jeremy Ecton, Gilbert, AZ (US)
Nicholas Haehn, Scottsdale, AZ (US)
Oscar Ojeda, Chandler, AZ (US)
Arnab Roy, Chandler, AZ (US)
Timothy White, Chandler, AZ (US)
Suddhasattwa Nad, Chandler, AZ (US)
Hsin-Wei Wang, Chandler, AZ (US)
Assignee Intel Corporation, Santa Clara, CA (US)

Claim of US Patent No. 11,116,084


1. A circuit device comprising:a first layer comprising a dielectric; and
a second layer of a metal on the first layer, the second layer comprising:a first sub-layer of the metal, the first sub-layer comprising a first average grain size, wherein the first sub-layer spans at least 5% of a thickness of the second layer;
a second sub-layer of the metal, the second sub-layer comprising a second average, grain size wherein the second sub-layer of the metallization layer which spans at least 5% of the thickness of the metallization second layer, the second average grain size smaller than the first average grain size; and
a third sub-layer of the metal, the third sub-layer comprising a third average grain size, wherein the third sub-layer spans at least 5% of the thickness of the second layer;


wherein:a first difference between the first average grain size and the second average grain size is at least 10% of the first average grain size; and
a second difference between the third average grain size and the second average grain size is at least 10% of the third average grain size.