1. An improved insulation protection structure, comprising:a sensor film;
a chip outline, configured on said sensor film;
a protective film, covering on top of said chip outline; and
an insulating cement layer, disposed between said chip outline and said protective film, wherein said insulating cement layer comprises at least one surface facing inward said chip outline, retracted toward a direction of said chip outline and forms a retracted region along at least one side of said sensor film, wherein a first pitch is formed between an edge of said insulating cement layer and said at least one side of said sensor film, and a width of said first pitch is greater than 0.3 mm.