US Patent No. 11,071,212


Patent No. 11,071,212
Issue Date July 20, 2021
Title Semiconductor Device Manufacturing Method
Inventorship Bin Wan Mat Wan Azha, Matsumoto (JP)
Takeshi Yokoyama, Matsumoto (JP)
Assignee FUJI ELECTRIC CO., LTD., Kawasaki (JP)

Claim of US Patent No. 11,071,212

1. A semiconductor device manufacturing method; comprising:preparing a multilayer board and a plurality of contact parts, the multilayer board including an insulating layer; a circuit pattern layer formed on a front surface of the insulating layer, and a metal layer formed on a rear surface of the insulating layer and having an area larger than an area of the circuit pattern layer in a plan view of the multilayer board;
arranging each of the plurality of contact parts on the circuit pattern layer of the multilayer board via a bonding material;
arranging a pressing area of a main surface of a plate-shaped holding jig on the plurality of contact parts; and
while heating the multilayer board, pressing the plurality of contact parts against the multilayer board by inclining the pressing area of the holding jig to conform to a warp of the multilayer board.