US Patent No. 11,032,899

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD


Patent No. 11,032,899
Issue Date June 08, 2021
Title Plasma Processing Apparatus And Plasma Processing Method
Inventorship Yohei Uchida, Miyagi (JP)
Tetsuji Sato, Miyagi (JP)
Shojiro Yahata, Miyagi (JP)
Taira Takase, Miyagi (JP)
Assignee TOKYO ELECTRON LIMITED, Tokyo (JP)

Claim of US Patent No. 11,032,899

1. A plasma processing method performed in a plasma processing apparatus,wherein the plasma processing apparatus comprises:
a cooling plate;
an upper electrode;
an electrostatic chuck provided between the cooling plate and the upper electrode and configured to attract the upper electrode;
a power supply configured to apply a voltage to the electrostatic chuck; and
a power supply controller configured to control an absolute value of the voltage applied to the electrostatic chuck from the power supply, and
wherein the plasma processing method comprises:
controlling the power supply such that the absolute value is increased based on a degree of consumption of the upper electrode.