US Patent No. 10,599,517

MEMORY DEVICE


Patent No. 10,599,517
Issue Date March 24, 2020
Title Memory Device
Inventorship Chien-Yin Liu, Hsinchu (TW)
Yu-Der Chih, Hsin-Chu (TW)
Hsueh-Chih Yang, Hsinchu (TW)
Jonathan Tehan Chen, Hsinchu (TW)
Kuan-Chun Chen, Hsinchu (TW)
Assignee Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)

Claim of US Patent No. 10,599,517

1. A method, comprising:retrieving a first word comprising a plurality of data bits and a plurality of original parity bits that correspond to the first word, wherein the plurality of data bits form N?1 groups and the plurality of original parity bits form a first group different from the N?1 groups, and N is a positive integer greater than 2;
receiving a request to update respective data bits of a first one of the N?1 groups; and
providing a second word comprising updated data bits that form a second one of the N?1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N?1 groups such that a respective location of the plurality of updated parity bits within the second word is different from a respective location of the plurality of original parity bits within the first word.