US Patent No. 10,561,021

POWER SEMICONDUCTOR MODULE AND POWER SEMICONDUCTOR DEVICE


Patent No. 10,561,021
Issue Date February 11, 2020
Title Power Semiconductor Module And Power Semiconductor Device
Inventorship Kenshi Terashima, Matsumoto (JP)
Assignee FUJI ELECTRIC CO., LTD., Kanagawa (JP)

Claim of US Patent No. 10,561,021

1. A power semiconductor module comprising:a housing which houses a power semiconductor chip;
a plurality of control pins which protrude outward from an upper surface of the housing, and establish a direct electrical connection between the power semiconductor chip and a control board, at least one of the plurality of control pins being electrically connected to a driver IC to transfer a supply voltage to the driver IC or a control signal to control operation of the power semiconductor chip; and
at least one guide pin which protrudes outward from the upper surface of the housing, wherein
each of the plurality of control pins has at least one step in a height direction from the upper surface of the housing toward a tip farthest from the housing, the at least one step contacting a back surface of the control board, and
a maximum diameter of each of the plurality of control pins is smaller than a maximum diameter of the at least one guide pin.