US Patent No. 10,522,717

STRAINED ALGAINP LAYERS FOR EFFICIENT ELECTRON AND HOLE BLOCKING IN LIGHT EMITTING DEVICES


Patent No. 10,522,717
Issue Date December 31, 2019
Title Strained Algainp Layers For Efficient Electron And Hole Blocking In Light Emitting Devices
Inventorship Lekhnath Bhusal, San Jose, CA (US)
Theodore Chung, San Jose, CA (US)
Parijat Deb, San Jose, CA (US)
Assignee Lumileds LLC, San Jose, CA (US)

Claim of US Patent No. 10,522,717

1. A light-emitting device, comprising:an electron blocking layer;
a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including:
a first barrier layer having a first tensile strain,
a second barrier layer having a second tensile strain,
a first well layer disposed between the first barrier layer and the second barrier layer,
a first unstrained barrier layer,
a second unstrained barrier layer, and
a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.