US Patent No. 10,522,717
STRAINED ALGAINP LAYERS FOR EFFICIENT ELECTRON AND HOLE BLOCKING IN LIGHT EMITTING DEVICES
| Patent No. | 10,522,717 |
|---|---|
| Issue Date | December 31, 2019 |
| Title | Strained Algainp Layers For Efficient Electron And Hole Blocking In Light Emitting Devices |
| Inventorship | Lekhnath Bhusal, San Jose, CA (US) Theodore Chung, San Jose, CA (US) Parijat Deb, San Jose, CA (US) |
| Assignee | Lumileds LLC, San Jose, CA (US) |
Claim of US Patent No. 10,522,717
1. A light-emitting device, comprising:an electron blocking layer;
a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including:
a first barrier layer having a first tensile strain,
a second barrier layer having a second tensile strain,
a first well layer disposed between the first barrier layer and the second barrier layer,
a first unstrained barrier layer,
a second unstrained barrier layer, and
a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.
a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including:
a first barrier layer having a first tensile strain,
a second barrier layer having a second tensile strain,
a first well layer disposed between the first barrier layer and the second barrier layer,
a first unstrained barrier layer,
a second unstrained barrier layer, and
a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.