US Patent No. 10,510,587

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE


Patent No. 10,510,587
Issue Date December 17, 2019
Title Method For Manufacturing Semiconductor Device
Inventorship Wei-Chieh Huang, Hsinchu County (TW)
Chin-Wei Liang, Hsinchu County (TW)
Feng-Jia Shiu, Hsinchu County (TW)
Hsia-Wei Chen, Taipei (TW)
Jieh-Jang Chen, Hsinchu County (TW)
Ching-Sen Kuo, Taipei (TW)
Assignee TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)

Claim of US Patent No. 10,510,587

1. A method for manufacturing a semiconductor device, the method comprising:forming a memory cell protruding from a substrate;
forming a dielectric layer covering the memory cell;
forming a dummy layer covering the dielectric layer; and
performing a chemical mechanical polishing/planarization (CMP) process to completely remove the dummy layer,
wherein a material of the dummy layer has a slower removal rate to the CMP process than a material of the dielectric layer,
the memory cell includes a bottom electrode, a memory film, and a top electrode stacking on each other in a thickness direction of the substrate, and
the memory film is made of a magnetic tunnel junction (MTJ) film.