US Patent No. 10,485,111
VIA AND SKIP VIA STRUCTURES
| Patent No. | 10,485,111 |
|---|---|
| Issue Date | November 19, 2019 |
| Title | Via And Skip Via Structures |
| Inventorship | Shao Beng Law, Watervliet, NY (US) Nicholas V. LiCausi, Watervliet, NY (US) Errol Todd Ryan, Clifton Park, NY (US) James McMahon, Clifton Park, NY (US) Ryan S. Smith, Clifton Park, NY (US) Xunyuan Zhang, Albany, NY (US) |
| Assignee | GLOBALFOUNDRIES INC., Grand Cayman (KY) |
Claim of US Patent No. 10,485,111
1. A method comprising:forming a first metallization layer with a first capping layer over the first metallization layer;
forming a second metallization layer with a second capping layer over the second metallization layer;
etching through a first dielectric layer to the first capping layer;
forming a partial skip via structure to the first metallization layer by removing a portion of the first capping layer and the second capping layer and depositing conductive material in an opening formed in the second metallization layer;
forming a third capping layer over the filled partial skip via and directly on the second capping layer;
forming a second dielectric layer covering select metallization features of the second metallization layer; and
forming a remaining portion of a skip via structure in alignment with the partial skip via structure by opening the third capping layer to expose the conductive material of the partial skip via, wherein the third capping layer directly on the second capping layer forms a gap fill for the skip via structure.
forming a second metallization layer with a second capping layer over the second metallization layer;
etching through a first dielectric layer to the first capping layer;
forming a partial skip via structure to the first metallization layer by removing a portion of the first capping layer and the second capping layer and depositing conductive material in an opening formed in the second metallization layer;
forming a third capping layer over the filled partial skip via and directly on the second capping layer;
forming a second dielectric layer covering select metallization features of the second metallization layer; and
forming a remaining portion of a skip via structure in alignment with the partial skip via structure by opening the third capping layer to expose the conductive material of the partial skip via, wherein the third capping layer directly on the second capping layer forms a gap fill for the skip via structure.