US Patent No. 10,461,252

RESISTIVE RANDOM ACCESS MEMORY


Patent No. 10,461,252
Issue Date October 29, 2019
Title Resistive Random Access Memory
Inventorship Ting-Chang Chang, Kaohsiung (TW)
Kuan-Chang Chang, Kaohsiung (TW)
Tsung-Ming Tsai, Kaohsiung (TW)
Chih-Cheng Shih, Kaohsiung (TW)
Chih-Hung Pan, Kaohsiung (TW)
Assignee National Sun Yat-Sen University, Kaohsiung (TW)

Claim of US Patent No. 10,461,252

1. A resistive random access memory comprising:a first electrode;
a second electrode separate from the first electrode;
an enclosing layer forming a first via-hole; and
an oxygen-containing resistance changing layer arranged for the first via-hole, wherein the first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer, wherein each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen, wherein each of the first electrode, the second electrode and the enclosing layer abuts with the oxygen-containing resistance changing layer, wherein the enclosing layer is mounted on one of the first and second electrodes, and
wherein the oxygen-containing resistance changing layer is formed from oxides doped with chlorine and is completely located in the first via-hole, wherein the first electrode is not parallel to the second electrode, wherein the enclosing layer encloses the first electrode but does not enclose the second electrode, and wherein the enclosing layer is in contact with a bottom face of the second electrode.