US Patent No. 10,461,246

MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME


Patent No. 10,461,246
Issue Date October 29, 2019
Title Memory Device And Method For Manufacturing The Same
Inventorship Chih-Wei Lu, Hsinchu (TW)
Hsi-Wen Tien, Hsinchu County (TW)
Wei-Hao Liao, Taichung (TW)
David Dai, New Taipei (TW)
Chung-Ju Lee, Hsinchu (TW)
Assignee TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)

Claim of US Patent No. 10,461,246

1. A memory device, comprising:a bottom electrode;
a resistance switching element over the bottom electrode;
a top electrode over the resistance switching element;
an interlayer dielectric layer surrounding the resistance switching element;
a first spacer between the interlayer dielectric layer and a sidewall of the resistance switching element, wherein a bottom surface of the first spacer is over a top surface of the bottom electrode; and
a metal-containing compound layer between the interlayer dielectric layer and the sidewall of the resistance switching element.