US Patent No. 10,433,435

SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE


Patent No. 10,433,435
Issue Date October 01, 2019
Title Semiconductor Device, Related Manufacturing Method, And Related Electronic Device
Inventorship Herb He Huang, Shanghai (CN)
Clifford Ian Drowley, Shanghai (CN)
Hai Ting Li, Shanghai (CN)
Assignee Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai...

Claim of US Patent No. 10,433,435

1. A method for manufacturing a semiconductor device, comprising:providing a first substrate;
providing a second substrate;
providing a first dielectric layer that overlaps the first substrate, wherein a first conductive member is positioned in the first dielectric layer, the first conductive member including:
a conductive material portion, and
a first etch-stop layer, formed over the conductive material portion by a conductive material different from the conductive material portion;
providing a second dielectric layer that overlaps the second substrate, wherein a second conductive member is positioned in the second dielectric layer;
bonding the first dielectric layer and the second dielectric layer to each other to form a combined dielectric layer;
forming a hole in the combined dielectric layer, such that the hole exposes a portion of the first conductive member and exposes a portion of the second conductive member; and
providing at least a conductive material in the hole to form a third conductive member, such that the third conductive member has a first side directly contacting a portion of a top surface of the first etch-stop layer of the first conductive member, has a second side directly contacting a portion of a top surface of the second conductive member, and has a third side directly contacting a sidewall of each of the first etch-stop layer and the conductive material portion of the first conductive member.