US Patent No. 10,392,725

METHOD FOR DEPOSITING SILICON FEEDSTOCK MATERIAL, SILICON WAFER, SOLAR CELL AND PV MODULE


Patent No. 10,392,725
Issue Date August 27, 2019
Title Method For Depositing Silicon Feedstock Material, Silicon Wafer, Solar Cell And Pv Module
Inventorship Frank Asbeck, Bonn (DE)
Assignee Frank Asbeck, Bonn (DE)

Claim of US Patent No. 10,392,725

1. A method for depositing a doped silicon feedstock material, the method comprising:introducing a first gas comprising silicon into a reactor chamber; and
introducing a second gas comprising at least one of gallium or indium into the reactor chamber; and
depositing silicon feedstock material doped with at least one of gallium or indium onto a surface within the reactor chamber,
wherein the first gas and the second gas are introduced into the reactor chamber as a mixture,
wherein at least a portion of the first gas is exposed to a material to generate the second gas in a further reactor chamber before entering the reactor chamber,
wherein the further reactor chamber is located outside the reactor chamber.