US Patent No. 10,381,508

LIGHT EMITTING ELEMENT WITH AN ENHANCED ELECTROLUMINESCENCE EFFECT


Patent No. 10,381,508
Issue Date August 13, 2019
Title Light Emitting Element With An Enhanced Electroluminescence Effect
Inventorship I-Kai Lo, Kaohsiung (TW)
Ying-Chieh Wang, Kaohsiung (TW)
Yu-Chi Hsu, Kaohsiung (TW)
Cheng-Hung Shih, Kaohsiung (TW)
Assignee NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung (TW)

Claim of US Patent No. 10,381,508

1. A light emitting element with an enhanced electroluminescence effect, comprising:a gallium nitride layer having a mounting face, wherein the gallium nitride layer grows in [0001] direction of a four-axis coordinate system, wherein an end of the mounting face of the gallium nitride layer is terminated with nitrogen elements;
a gallium nitride pyramid having a larger end face and a smaller end face, wherein the gallium nitride pyramid grows in [0001] direction of the four-axis coordinate system, wherein an end of the larger end face of the gallium nitride pyramid is terminated with gallium elements, wherein the larger end face of the gallium nitride pyramid contacts with the mounting face of the gallium nitride layer, with a c-axis of the gallium nitride layer coaxial with a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, wherein broken bonds at the larger end face of the gallium nitride pyramid and the mounting face of the gallium nitride layer weld together, wherein nitrogen elements of the end of the mounting face bond to gallium elements of the end of the larger end face, wherein the gallium nitride layer is a p-type semiconductor and the gallium nitride pyramid is an n-type semiconductor;
an insulating layer covering surfaces of the gallium nitride layer and the gallium nitride pyramid, wherein a portion of the gallium nitride pyramid is not covered by the insulating layer to form an electrically conductive portion of the gallium nitride pyramid, and a portion of the gallium nitride layer is not covered by the insulating layer to form another electrically conductive portion of the gallium nitride layer;
a first electrode electrically connecting to the electrically conductive portion of the gallium nitride pyramid; and
a second electrode electrically connecting to the electrically conductive portion of the gallium nitride layer,
wherein a top of the gallium nitride pyramid is truncated and flush with a surface of insulating layer.