1. A deep ultraviolet light-emitting diode comprising:a base layer including a p-type material forming a first side of the diode;
an active layer grown on the base layer, whereby radiative recombination of carriers in the active layer produces ultraviolet light in response to an applied electric field;
a light reflecting layer disposed between the base layer and the active layer, wherein the light reflecting layer reflects the ultraviolet light away from the base layer, and
an n-AlGaN layer grown on the active layer, wherein the n-AlGaN is on a second side of the diode which is opposite to the first side, and wherein the active layer is disposed between the base layer and the n-AlGaN layer and wherein the n-AlGaN layer includes a textured surface, whereby ultraviolet light is emitted from the textured surface.