US Patent No. 10,344,397

III-NITRIDE EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME


Patent No. 10,344,397
Issue Date July 09, 2019
Title Iii-nitride Epitaxial Structure And Method For Manufacturing The Same
Inventorship I-kai Lo, Kaohsiung (TW)
Chen-Chi Yang, Kaohsiung (TW)
Ming-Chi Chou, Kaohsiung (TW)
Assignee National Sun Yat-Sen University, Kaohsiung (TW)

Claim of US Patent No. 10,344,397

1. An III-nitride epitaxial structure comprising:a gallium nitride layer comprising a M-plane gallium nitride and a c-plane gallium nitride, wherein the M-plane gallium nitride surrounds the c-plane gallium nitride;
an indium gallium nitride layer arranged on the gallium nitride layer, wherein the indium gallium nitride layer comprises a M-plane indium gallium nitride and a c-plane indium gallium nitride, wherein the M-plane indium gallium nitride surrounds the c-plane indium gallium nitride; and
an indium nitride layer arranged on the indium gallium nitride layer, wherein the indium nitride layer comprises a M-plane indium nitride and a c-plane indium nitride, wherein the M-plane indium nitride surrounds the c-plane indium nitride;
wherein the c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion, wherein the neck portion is connected to a thin c-plane indium nitride disk, and the thin c-plane indium nitride disk is spaced from the M-plane indium nitride by a gap.