US Patent No. 10,304,997


Patent No. 10,304,997
Issue Date May 28, 2019
Title Iii-nitride Light Emitting Device With A Region Including Only Ternary, Quaternary, And/or Quinary Iii-nitride Layers
Inventorship Michael Jason Grundmann, Eindhoven (NL)
Nathan Frederick Gardner, Eindhoven (NL)
Werner Karl Goetz, Eindhoven (NL)
Melvin Barker McLaurin, Eindhoven (NL)
John Edward Epler, Eindhoven (NL)
Francisco Alexander Leon, Eindhoven (NL)
Assignee Lumileds LLC, San Jose, CA (US)

Claim of US Patent No. 10,304,997

1. A method comprising:growing a III-nitride structure grown on a substrate, the III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein the III-nitride structure comprises a region including only ternary, quaternary, and/or quinary III-nitride layers and the region including only ternary, quaternary, and/or quinary IIInitride layers is thicker than 2 ?m and growing a base region disposed between the substrate and the light emitting layer, the base region comprising a first layer proximate the substrate and a second layer proximate the light emitting layer wherein the net polarization-induced charge at the interface of the first layer and the second layer is zero, the first layer is a quaternary layer AlxInyGa1-x-yN between 3 and 1000 nm, and the second layer is a quaternary layer AlxInyGa1-x-y N of a different composition than the first layer;
attaching the III-nitride structure to a mount; and
removing the substrate, wherein:
the substrate is RA03(MO)n, where R is one of a trivalent cation, Sc, In, Y, and a lanthanide; A is one of a trivalent cation, Fe (III), Ga, and AI; M is one of a divalent cation, Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer?1;the substrate has an in-plane lattice constant asubstrate;at least one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer; and
[(1 asubstrate?alayer|)/asubstrate]*100% is no more than 1%.