US Patent No. 10,193,015

REDUCING OR ELIMINATING NANOPIPE DEFECTS IN III-NITRIDE STRUCTURES


Patent No. 10,193,015
Issue Date January 29, 2019
Title Reducing Or Eliminating Nanopipe Defects In Iii-nitride Structures
Inventorship Patrick Nolan Grillot, San Jose, CA (US)
Isaac Harshman Wildeson, San Jose, CA (US)
Tigran Nshanian, Santa Clara, CA (US)
Parijat Pramil Deb, San Jose, CA (US)
Assignee LUMILEDS LLC, San Jose, CA (US)

Claim of US Patent No. 10,193,015

1. A device comprising:a III-nitride light emitting layer disposed between an n-type region and a p-type region; and
a III-nitride layer doped with an acceptor having a concentration that increases linearly across the III-nitride layer such that a concentration of acceptor is higher in a portion of the III-nitride layer doped with an acceptor closer to the light emitting layer than in a portion of the III-nitride layer doped with an acceptor further from the light emitting layer, the III-nitride layer doped with an acceptor being positioned such that the n-type region is disposed between the III-nitride layer doped with an acceptor and the light emitting layer.