1. A light emitting device comprising:light emitting diode (LED) semiconductor layers comprising an N-type layer, an active layer configured to emit a primary light, and a P-type layer; and
luminescent sapphire distinct from a growth substrate for the semiconductor layers, the luminescent sapphire being affixed over a light emitting surface of the LED semiconductor layers,
the LED semiconductor layers and the luminescent sapphire forming part of an LED die, the luminescent sapphire containing oxygen vacancies resulting in F-like centers having defined optical absorption and luminescence emission bands,
the luminescent sapphire configured to absorb a portion of the primary light and down-converts the primary light to emit secondary light, via the F-like centers, such that an emission from the LED die includes at least a combination of the primary light and the secondary light.