US Patent No. 10,177,267


Patent No. 10,177,267
Issue Date January 08, 2019
Title Photodetector
Inventorship Jianping Zhang, San Jose, CA (US)
Ling Zhou, San Jose, CA (US)
Ying Gao, San Jose, CA (US)
Assignee BOLB INC., San Jose, CA (US)

Claim of US Patent No. 10,177,267

1. An UV photodetector comprising:a substrate;
a template layer formed on the substrate;
an intrinsic AlGaN layer formed on the template layer;
a first n-type AlGaN layer and a second n-type AlGaN layer formed on the intrinsic AlGaN layer side-by-side and separated by a gap, wherein the gap exposes the intrinsic AlGaN layer;
a p-type layer formed on the second n-type AlGaN layer;
an n-type ohmic contact formed on the first n-type AlGaN layer; and
a p-type ohmic contact formed on the p-type layer, wherein the p-type ohmic contact is positively biased against the n-type ohmic contact when in use.