US Patent No. 10,170,328

SEMICONDUCTOR PATTERN HAVING SEMICONDUCTOR STRUCTURES OF DIFFERENT LENGTHS


Patent No. 10,170,328
Issue Date January 01, 2019
Title Semiconductor Pattern Having Semiconductor Structures Of Different Lengths
Inventorship Chiang-Lin Shih, New Taipei (TW)
Shing-Yih Shih, New Taipei (TW)
Assignee NANYA TECHNOLOGY CORPORATION, New Taipei (TW)

Claim of US Patent No. 10,170,328

1. A semiconductor pattern comprising:a substrate;
a plurality of first semiconductor structures disposed over the substrate, the first semiconductor structures comprising a first length;
a plurality of second semiconductor structures disposed over the substrate, the second semiconductor features comprising a second length, and the first semiconductor features and the second semiconductor features being alternately arranged; and
a semiconductor frame structure disposed over the substrate, the semiconductor frame structure encircling the first semiconductor structures and the second semiconductor structures,
wherein the first length of the first semiconductor structures is less than the second length of the second semiconductor structures.