US Patent No. 10,141,477
STRAINED ALGAINP LAYERS FOR EFFICIENT ELECTRON AND HOLE BLOCKING IN LIGHT EMITTING DEVICES
| Patent No. | 10,141,477 |
|---|---|
| Issue Date | November 27, 2018 |
| Title | Strained Algainp Layers For Efficient Electron And Hole Blocking In Light Emitting Devices |
| Inventorship | Lekhnath Bhusal, San Jose, CA (US) Theodore Chung, San Jose, CA (US) Parijat Deb, San Jose, CA (US) |
| Assignee | Lumileds LLC, San Jose, CA (US) |
Claim of US Patent No. 10,141,477
1. A light-emitting device, comprising:an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain;
a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer.
a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer.