US Patent No. 10,134,965

PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE


Patent No. 10,134,965
Issue Date November 20, 2018
Title Passivation For A Semiconductor Light Emitting Device
Inventorship Frederic Stephane Diana, Santa Clara, CA (US)
Kwong-Hin Henry Choy, Sunnyvale, CA (US)
Qingwei Mo, Sunnyvale, CA (US)
Serge L. Rudaz, Sunnyvale, CA (US)
Frank L. Wei, San Francisco, CA (US)
Daniel A. Steigerwald, Cupertino, CA (US)
Assignee Lumileds LLC, San Jose, CA (US)

Claim of US Patent No. 10,134,965

1. A method, comprising:growing a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
etching away a portion of the p-type region and the light emitting layer to expose a portion of the n-type region;
forming an n-contact on the exposed portion of the n-type region;
forming a metal bonding layer over the n-contact;
disposing a passivation layer over an outer side of the metal bonding layer, an outer side of the n-contact, and on top of the exposed portion of the n-type region; and
disposing and underfill beneath the semiconductor structure, including over an outer side of the passivation layer, the passivation layer and the underfill forming a seal at a sidewall of the semiconductor structure.