1. A device comprising:a substrate;
a semiconductor structure disposed on the substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein:
the substrate comprises a first sidewall and a second sidewall;
the first sidewall and second sidewall are disposed at different angles relative to a major surface of the semiconductor structure;
the first sidewall forms a right angle with the major surface of the semiconductor structure; and
light is extracted from the substrate through the second sidewall; and
a reflective layer disposed over the first sidewall, the reflective layer extending from the semiconductor structure to an interface between the first sidewall and the second sidewall.