US Patent No. 10,090,435
III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR
| Patent No. | 10,090,435 |
|---|---|
| Issue Date | October 02, 2018 |
| Title | Iii-nitride Light Emitting Device Including Porous Semiconductor |
| Inventorship | Jonathan J. Wierer, Pleasanton, CA (US) John E. Epler, San Jose, CA (US) |
| Assignee | LUMILEDS LLC, San Jose, CA (US) |
Claim of US Patent No. 10,090,435
1. A method comprising:growing a first III-nitride layer directly on a substrate;
making at least a portion of the first III-nitride layer porous;
growing a second III-nitride layer directly on the porous portion, the second layer comprising InGaN; and
growing a device structure directly on the second III-nitride layer, the device structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region.
making at least a portion of the first III-nitride layer porous;
growing a second III-nitride layer directly on the porous portion, the second layer comprising InGaN; and
growing a device structure directly on the second III-nitride layer, the device structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region.