US Patent No. 10,090,435

III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR


Patent No. 10,090,435
Issue Date October 02, 2018
Title Iii-nitride Light Emitting Device Including Porous Semiconductor
Inventorship Jonathan J. Wierer, Pleasanton, CA (US)
John E. Epler, San Jose, CA (US)
Assignee LUMILEDS LLC, San Jose, CA (US)

Claim of US Patent No. 10,090,435

1. A method comprising:growing a first III-nitride layer directly on a substrate;
making at least a portion of the first III-nitride layer porous;
growing a second III-nitride layer directly on the porous portion, the second layer comprising InGaN; and
growing a device structure directly on the second III-nitride layer, the device structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region.